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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

By (author) Zhiqiang Li

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normal price: R 2 267.95

Price: R 2 153.95

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This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With Â adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600â„ƒ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8Ã—10âˆ’7Î©â€¢cm2, respectively. Besides, a reduced Â source/drain parasitic resistance is demonstrated in the Â fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

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The Order of Time

Carlo Rovelli
Paperback / softback
224 pages
was: R 295.95
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Originally published in Italian: L'ordine del tempo (Milan: Adelphi Edizioni, 2017).

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Helgoland: The Strange and Beautiful Story of Quantum Physics

Carlo Rovelli
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208 pages
was: R 295.95
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The Coming Wave: AI, Power and Our Future

Mustafa Suleyman
Paperback / softback
352 pages
was: R 295.95
now: R 265.95
Stock is usually dispatched in 6-12 days from date of order

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