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Defects and Synchrotron X-Ray Topography in Silicone-Carbide Based Devices

Edited by Juraj Marek, Edited by Gregor Pobegen, Edited by Ulrike Grossner

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The presented special edition is devoted to the latest research in semiconductor materials and devices on silicon carbide and the design and research of machines and equipment. This issue will be helpful to specialists engaged in the design and production of power electronics and to mechanical engineers.

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