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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

By (author) Yue Hao, By (author) Jin Feng Zhang, By (author) Jin Cheng Zhang





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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

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Normally shipped | Enquiries only
Publisher | Taylor & Francis Ltd
Published date | 3 Nov 2016
Language |
Format | Digital (delivered electronically)
Pages | 392
Dimensions | 0 x 0 x 0mm (L x W x H)
Weight | 0g
ISBN | 978-1-3153-5183-4
Readership Age |
BISAC | computers / information technology


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